Part Number Hot Search : 
D7677 120CA 65N02R EM4444 TA0751B SY58032U 650NUX N4682
Product Description
Full Text Search
 

To Download HMC409LP4 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
5
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: * WiMAX 802.16 * Fixed Wireless Access * Wireless Local Loop
Features
Gain: 31 dB 40% PAE @ +32.5 dBm pout 2% EVM @ Pout = +22 dBm with 54Mbps OFDM Signal +46 dBm Output IP3 Integrated Power Control (Vpd)
Functional Diagram
Single +5V Supply
General Description
The HMC409LP4 & HMC409LP4E are high efficiency GaAs InGaP HBT MMIC Power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5.0V supply voltage. The power control (Vpd) can be used for full power down or RF output power/current control. For +22 dBm OFDM output power (64 QAM, 54 Mbps), the HMC409LP4 & HMC409LP4E achieve an error vector magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements.
Electrical Specifications, TA = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Error Vector Magnitude @ 3.5 GHz (54 Mbps OFDM Signal @ +22 dBm Pout) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Bias Current (Ibias) Vs= Vcc1 + Vcc2= +5V Vpd = +5V tOn, tOff 5.8 615 4 20 10 41 28 30 Min. Typ. 3.3 - 3.4 32 0.04 10 13 30 32 45 42 28 0.05 29 Max. Min. Typ. 3.4 - 3.6 31.5 0.04 15 14 30.5 32.5 45.5 2 5.8 615 4 20 10 6 615 4 20 10 41 28 0.05 28 Max. Min. Typ. 3.6 - 3.8 30 0.035 15 10 30.5 32 45 0.045 Max. Units GHz dB dB/ C dB dB dBm dBm dBm % dB mA mA ns mA
Note 1: Specifications and data reflect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
5 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Broadband Gain & Return Loss
35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 2 2.5 3
Gain vs. Temperature
38 36 34 GAIN (dB)
5
AMPLIFIERS - SMT
5 - 167
RESPONSE (dB)
S21 S11 S22
32 30 28 26 24 22 20
+25 C +85 C -40 C
3.5
4
4.5
5
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
+25 C +85 C -40 C
Output Return Loss vs. Temperature
0
+25 C +85 C -40 C
-5 RETURN LOSS (dB)
-10
-15
-20
-25 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
Power Down Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
+25 C +85 C -40 C
+25 C +85 C -40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
5
AMPLIFIERS - SMT
P1dB vs. Temperature
36 34 32 30 28 26 24 22 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
+25 C +85 C -40 C
Psat vs. Temperature
36 34 32 PSAT (dBm) 30 28 26 24 22 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
+25 C +85 C -40 C
Output IP3 vs. Temperature
50 48 46 44 OIP3 (dBm) 42 40 38 36 34 32 30 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 FREQUENCY (GHz)
+25 C +85 C -40 C
P1dB (dBm)
Power Compression @ 3.5GHz
40 Pout (dBm), GAIN (dB), PAE (%) 36 32 28 24 20 16 12 8 4 0 -20 -16 -12 -8 -4 0
Pout (dBm) Gain (dB) PAE (%)
4
8
INPUT POWER (dBm)
Gain & Power vs. Supply Voltage
35 GAIN (dB), P1dB (dBm), Psat (dBm) 34 33 32 31 30 29 28 4.75
Gain Psat P1dB
Noise Figure vs. Temperature
12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0
+25 C +85 C -40 C
5 Vcc SUPPLY VOLTAGE (Vdc)
5.25
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
FREQUENCY (GHz)
5 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz
40 GAIN (dB), P1dB (dBm), Psat (dBm) 35 30 25 20 15 10 5 0 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Gain Psat P1dB Icc
Power Dissipation
800 700 POWER DISSIPATION (W) 600 500 Icc (mA) 400 300 200 100 0 5.5 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Max Pdiss @ +85C
5
AMPLIFIERS - SMT
5 - 169
Vpd (Vdc)
INPUT POWER (dBm)
EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal
14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10 12 14 16 18 20 ERROR VECTOR MAGNITUDE (%)
+25 C +85 C -40 C
22
24
26
28
30
OUTPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd
5
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 57.5 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5.5 Vdc +10 dBm 150 C 3.74 W 17.4 C/W -65 to +150 C -40 to +85 C
Vs (Vdc) 4.75 5.0 5.25
Icq (mA) 516 615 721
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number HMC409LP4 HMC409LP4E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H409 XXXX H409 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
5 - 170
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Application Circuit
5
AMPLIFIERS - SMT
Recommended Component Values C1 - C5 C6 - C7 C8 C9 C10 C11 L1, L2 L3 R1 100pF 1000pF 10 pF 0.5 pF 1.6 pF 4.7F 3.9 nH 2.2 nH 56 Ohm Impedance Physical Length Electrical Length
TL1 50 Ohm 0.048" 10
TL2 50 Ohm 0.12" 24
TL3 50 Ohm 0.052" 11
PCB Material: 10 mil Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 171
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1-3, 5, 6, 8, 10 -14, 18, 19, 21, 22, 24 4 Function N/C Description No conection required. These pins may be connected to RF/DC ground without affecting performance. This pin is AC coupled and matched to 50 Ohms from 3.3 - 3.8 GHz. Interface Schematic
RFIN
7
Vpd
Power control pin. For maximum power, this pin should be connected to 5.0V thru a 56 resistor. A high-voltage or small resistor is not recommended for lower idle current. This voltage can be reduced or the resistor increased.
9
Vbias
DC power supply pin for bias circuitry
15, 16, 17
RFOUT
RF output and DC bias for the output stage.
20
VCC2
Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required.
23
VCC1
GND
5 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC409LP4 / 409LP4E
v01.0705
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108355 [1]
Item J1 - J2 J3, J4 C1 - C5 C6 - C7 C8 C9 C10 C11 L1, L2 L3 R1 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 10 pF Capacitor, 0402 Pkg. 0.5 pF Capacitor, 0603 Pkg. 1.6 pF Capacitor, 0603 Pkg. 4.7 F, Tantalum 3.9 nH Inductor, 0603 Pkg. 2.2 nH Inductor, 0402 Pkg. Toko 56 Ohm Resistor, 0603 Pkg. HMC409LP4 / HMC409LP4E Amplifier 108353 Eval Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 173


▲Up To Search▲   

 
Price & Availability of HMC409LP4

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X